J161023 Improvement of Si/Photoresist Mask Etching Selectivity using Vacuum UV Curing Method

• FUJIMURA Kimiya

  Kagawa University

• TERAO Kyohei

  Kagawa University

• TAKAO Hidekuni

  Kagawa University

• SHIMOKAWA Fusao

  Kagawa University

• OOHIRA Fumikazu

  Kagawa University

• SUZUKI Takaaki

  Kagawa University

Bibliographic Information

Other Title

• J161023 真空UVキュア法によるSi/レジスト保護膜選択比の改善

Abstract

In the fine processing technology in recent years, the etching tolerance improvement of resists as a protective layer is requested with higher performance of the dry etching method. The curing methods with vacuum or UV have been proposed for controlling the reflow of the resist. Moreover, it is expected that the improvement of the etch selectivity Si/resist is improved by the curing method. In this study, we quantitatively evaluated the dry etch selectivity of the silicon with a protective layer made from the resist cured with vacuum and UV.

Journal

• The Proceedings of Mechanical Engineering Congress, Japan

  The Proceedings of Mechanical Engineering Congress, Japan 2012 (0), _J161023-1-_J161023-4, 2012

  The Japan Society of Mechanical Engineers

Keywords

• Resist
• Vacuum
• UV
• Cure
• Dry etching

Details

• CRID: 1390282680818219520
• NII Article ID: 110009994962
• DOI: 10.1299/jsmemecj.2012._j161023-1
• ISSN: 24242667
• Web Site: https://www.jstage.jst.go.jp/article/jsmemecj/2012/0/2012__J161023-1/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed