1503 Analysis of chemical reaction in Cu-CMP with reactive nanoparticles based on Raman spectra enhanced by surface plasmon
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- ASAHI Masafumi
- Department of Mechanical Engineering, Osaka University
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- TAKAYA Yasuhiro
- Department of Mechanical Engineering, Osaka University
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- MICHIHATA Masaki
- Department of Mechanical Engineering, Osaka University
抄録
Recently, planarization of wiring layers has been important. A technique of planarizing the wiring surface is chemical mechanical polishing (CMP). Fullerenol and polyglycerol-functionalized nanodiamond particles are proposed as abrasive grains for Cu-CMP. In this study, the chemical reaction between copper and these nanoparticles is investigated. Elucidation of the mechanism to form the reacted layer in CMP is attempted. Raman spectra enhanced by surface plasmon is used. This method enables to obtain signals from the reaction system under the same environment as CMP. Measurement results provide the posibility that the reacted layer is formed by adsorption of reactive nanoparticles on copper surface in CMP.
収録刊行物
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- Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21
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Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21 2015.8 (0), _1503-1_-_1503-5_, 2015
一般社団法人 日本機械学会
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詳細情報 詳細情報について
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- CRID
- 1390001205900760960
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- NII論文ID
- 110010045292
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- ISSN
- 24243086
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可