Potential barriers to electron carriers in C_<60> field-effect transistors

IR

Abstract

Transport properties of C_<60> field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C_<60>channel, and barriers to carrier hopping between trap states in the channel of C_<60>.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/4409

Journal

  • Applied Physics Letters

    Applied Physics Letters 92 (17), 173302-1-173302-3, 2008-04-28

    American Institute of Physics

Details 詳細情報について

  • CRID
    1050564287490465536
  • NII Article ID
    120000861338
  • ISSN
    00036951
  • Web Site
    http://hdl.handle.net/10119/4409
  • Text Lang
    en
  • Article Type
    journal article
  • Data Source
    • IRDB
    • CiNii Articles

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