Potential barriers to electron carriers in C_<60> field-effect transistors
Abstract
Transport properties of C_<60> field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C_<60>channel, and barriers to carrier hopping between trap states in the channel of C_<60>.
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/4409
Journal
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- Applied Physics Letters
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Applied Physics Letters 92 (17), 173302-1-173302-3, 2008-04-28
American Institute of Physics
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Details 詳細情報について
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- CRID
- 1050564287490465536
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- NII Article ID
- 120000861338
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- ISSN
- 00036951
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- Web Site
- http://hdl.handle.net/10119/4409
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- CiNii Articles