Effective carrier doping by magnetic field into a pseudogapped state in CeNiSn : A Sn NMR study

• Nakamura, Ko-ichi

• Kitaoka, Yoshio

• Asayama, Kunisuke

• Takabatake, Toshiro

• Nakamoto, Go

• Fujii, Hironobu

抄録

The magnetic field dependence of the spin-lattice relaxation rate 1/T1 of 119Sn in CeNiSn has been measured down to 20 mK in a field range of 0.2-8 T. (T1T)-1 is constant below 1 K, which depends on the external field in such a manner that its value stays constant to 2 T, while it increases linearly with the field up to 8 T. It is shown that this magnetic field dependence of (T1T)-1 is well explained by the simple scenario that the quasiparticle density of states at the Fermi level is produced by the Zeeman splitting of the up- and down-spin bands, keeping its V-shaped gapped structure unchanged for fields less than 8 T. The present experiment has elucidated that CeNiSn is in a semimetallic ground state with a low carrier density and the application of a magnetic field exceeding 2 T turns out to supply effective carriers.

収録刊行物

• Physical Review B - Condensed Matter and Materials Physics

  Physical Review B - Condensed Matter and Materials Physics 54 (9), 6062-6064, 1996-09-01

  American Physical Society

詳細情報

• CRID: 1050014791010763776
• NII論文ID: 120000880273
• NII書誌ID: AA11187113
• Web Site: http://ir.lib.hiroshima-u.ac.jp/00019289
• 本文言語コード: en
• 資料種別: journal article
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