Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy

• Sato, Taketomo

• Tamai, Isao

• Yoshida, Souichi

• Hasegawa, Hideki

Abstract

The mechanism determining heterointerface cross-sections is studied for GaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE). Arrays of <-1 1 0>- and <-1 -1 2>-orientated QWRs were grown on (001) and (111)B GaAs patterned substrates, respectively. A detailed investigation of cross-sections of wires has shown that the boundary planes appear on both sides of QWRs, keeping a constant angle, θ with respect to the flat top of the substrate pattern, and they determine the lateral wire width. Their evolution mechanism has turned out to be a kinetic process, reflecting differences in migration and atom incorporation rates on different facets. Simple formulas for θ have been derived, and they have shown excellent agreements with experiment. This has led to precise kinetic control of the wire width by growth conditions.

Journal

• Applied Surface Science

  Applied Surface Science 234 (1-4), 11-15, 2004-07-15

  Elsevier

Keywords

• selective growth
• molecular beam epitaxy (MBE)
• patterned substrate
• growth mechanism
• GaAs

Details

• CRID: 1050564288926945280
• NII Article ID: 120000956218
• HANDLE: 2115/8385
• ISSN: 01694332
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles