Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism

• Sato, Taketomo

• Oikawa, Takeshi

• Hasegawa, Hideki

• Hashizume, Tamotsu

抄録

Fundamental growth properties were investigated for the size-controlled selective MBE growth of AlGaN/GaN nanowires on the GaN (0001) prepatterned substrates both experimentally and theoretically. The lateral size of the present GaN nanowire was determined by two facet boundaries formed within AlGaN barrier layers. From the series of wire growth experiments, the growth selectivity and the measured angle of the facet boundary strongly depended on the Al composition and the initial crystalline facets of the mesa patterned templates. The experimental evolution of the cross-sectional structures was well reproduced by a computer simulation based on the phenomenological growth model where the slope angle dependence of lifetime of adatoms was taken into account. The lateral width of present nanowires could be kinetically controlled by the growth conditions and the supply thickness of AlGaN layers.

収録刊行物

• Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

  Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 24 (4), 2087-2092, 2006-07-26

  AVS Science & Technology of Materials, Interfaces, and Processing

詳細情報

• CRID: 1050564288932575744
• NII論文ID: 120000959106
• HANDLE: 2115/14595
• ISSN: 0734211X
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles