Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance

• Marumoto, Kazuhiro

• Kuroda, Shin-ichi

• Takenobu, Taishi

• Iwasa, Yoshihiro

抄録

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

収録刊行物

• PHYSICAL REVIEW LETTERS

  PHYSICAL REVIEW LETTERS 97 (25), 256603-256603, 2006-12

  American Physical Society

詳細情報

• CRID: 1050564288750188032
• NII論文ID: 120000975371
• HANDLE: 2237/8836
• ISSN: 00319007
• Web Site: https://nagoya.repo.nii.ac.jp/records/7161
• 本文言語コード: en
• 資料種別: journal article
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