Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance

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Abstract

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

Journal

  • PHYSICAL REVIEW LETTERS

    PHYSICAL REVIEW LETTERS 97(25), 256603-256603, 2006-12

    American Physical Society

Codes

  • NII Article ID (NAID)
    120000975371
  • Text Lang
    ENG
  • Article Type
    journal article
  • ISSN
    0031-9007
  • Data Source
    IR 
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