Leakage Loss and Phase Variation of a Buried Directional Coupler on a Silicon Substrate
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Effects of the presence of a silicon substrate on the leakage loss and phase variation of silica-based parallel waveguides are investigated using the imaginary-distance beam-propagation method. The leakage loss is evaluated as a function of the distance between the core and the substrate. Calculation shows that the loss of the directional coupler can be estimated using the single waveguide with the same cross section. It is also found that the beat length becomes longer than that without the substrate except the case where the core is extremely close to the substrate. In terms of the loss reduction, the insertion of a SiO2. film with a 1-μm thickness corresponds to an increase in the distance between the core and the substrate without the SiO2. film by about 2μm.
収録刊行物
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- IEEE Photonics Technology Letters
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IEEE Photonics Technology Letters 17 1873-1875, 2006-09-01
IEEE
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詳細情報 詳細情報について
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- CRID
- 1050017444760282880
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- NII論文ID
- 120000993267
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- NII書誌ID
- AA10681067
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- ISSN
- 10411135
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- Web Site
- http://hdl.handle.net/10114/232
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
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