Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers
抄録
Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N´-diphenyl-N,N´-bis(1-naphthyl)-1,1´-biphenyl-4,4´-diamine (α-NPD) layers were measured with various thicknesses of a molybdenum trioxide (MoO_3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO_3 layer forms Ohmic hole injection at the ITO/MoO_3/α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to an electron transfer from ITO and α-NPD to MoO_3.
identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/7783
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 91 (25), 253504-1-253504-3, 2007-11-17
American Institute of Physics
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詳細情報 詳細情報について
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- CRID
- 1050564287490669184
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- NII論文ID
- 120001009661
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- ISSN
- 00036951
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- Web Site
- http://hdl.handle.net/10119/7783
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
- CiNii Articles
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