Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition

• Ohdaira, K.

• Fujiwara, T.

• Endo, Y.

• Nishioka, K.

• Matsumura, H.

抄録

We investigate the microstructures of polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-μm-thick precursor a-Si films prepared by catalytic chemical vapor deposition (Cat-CVD) on Cr-coated textured glass substrates. Crystallization of a-Si is performed, keeping the dome-shaped structure formed during deposition of a-Si. The poly-Si film consists of densely-packed fine grains with sizes on the order of 10 nm. The grain size tends to increase approaching the Si/Cr interface, which can be understood as the result of solid-phase nucleation and following crystallization. Minority carrier lifetimes of the poly-Si films are worse than those formed on flat substrates. This degradation might be due to gaps in the Si layer formed during a-Si deposition or FLA.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/8165

収録刊行物

• Journal of Crystal Growth

  Journal of Crystal Growth 311 (3), 769-772, 2009-01-15

  Elsevier

キーワード

• A1. Recrystallization
• B2. Semiconducting silicon
• B3. Solar cells
• A3. Chemical vapor deposition processes

詳細情報

• CRID: 1050001337537294336
• NII論文ID: 120001300210
• ISSN: 00220248
• Web Site: http://hdl.handle.net/10119/8165
• 本文言語コード: en
• 資料種別: journal article
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