Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films

• Ohdaira, Keisuke

• Abe, Yuki

• Fukuda, Makoto

• Nishizaki, Shogo

• Usami, Noritaka

• Nakajima, Kazuo

• Karasawa, Takeshi

• Torikai, Tetsuya

• Matsumura, Hideki

Abstract

Polycrystalline silicon (poly-Si) films thicker than 1.5 μm, consisting of dense small grains called nano-grain poly-Si (ngp-Si), are formed by flash lamp annealing (FLA) of amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) method. Crystallinity of the ngp-Si films can be controlled by changing lamp irradiance. Secondary ion mass spectroscopy (SIMS) profiles of dopants in the ngp-Si films after FLA shows no serious diffusion. A minority carrier lifetime of over 5 μs is observed from these ngp-Si films after defect termination process using high pressure water vapor annealing (HPWVA), showing possibility of application for high-efficient thin film solar cells.

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/8166

Journal

• Thin Solid Films

  Thin Solid Films 516 (5), 600-603, 2008-01-15

  Elsevier

Keywords

• Annealing
• Crystallization
• Raman scattering
• secondary ion mass spectroscopy (SIMS)
• Silicon
• Solar cells
• Microcrystalline
• Minority carrier lifetime
• Flash lamp annealing

Details

• CRID: 1050282812514005120
• NII Article ID: 120001300211
• ISSN: 00406090
• Web Site: http://hdl.handle.net/10119/8166
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles