Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions

• Uemura, Tetsuya

• Imai, Yosuke

• Harada, Masanobu

• Matsuda, Ken-ichi

• Yamamoto, Masafumi

抄録

Magnetic and transport properties of a fully epitaxial CoFe/n-GaAs junction were investigated. The CoFe film grown on the GaAs showed strong magnetic anisotropy in which uniaxial anisotropy with an easy axis of [11^^-0] dominated with a slight cubic anisotropy having easy axes of [110] and [11^^-0] superimposed. Tunneling anisotropic magnetoresistance (TAMR) was observed at 4.2 K in the CoFe/n-GaAs junction. Angular dependence of the tunnel resistance showed uniaxial-type anisotropic tunnel resistance between the [110] and [11^^-0] directions in the (001) plane that varied strongly with a bias voltage. The observed TAMR effect can be explained by the anisotropic electronic structure due to Rashba and Dresselhaus spin-orbit interactions. (c) 2009 American Institute of Physics.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 94 (18), 182502-, 2009-05-04

  American Institute of Physics

キーワード

• cobalt alloys
• ferromagnetic materials
• gallium arsenide
• III-V semiconductors
• iron alloys
• magnetic anisotropy
• magnetic epitaxial layers
• semiconductor-metal boundaries
• spin-orbit interactions
• tunnelling magnetoresistance

詳細情報

• CRID: 1050564288954350848
• NII論文ID: 120001342684
• HANDLE: 2115/38547
• ISSN: 00036951
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
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  • CiNii Articles