Effects of Counteranions and Dissolved Oxygen on Chemical ZnO Deposition from Aqueous Solutions
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抄録
In the chemical ZnO deposition on Pd-catalyzed glass from aqueous dimethylamineborane (DMAB) solutions, effects of counteranions (NO3-, Cl−, ClO4-, and SO42-) and dissolved oxygen (DO) on the hydrolysis behavior of Zn2+ and the growth regime of ZnO were studied using sodium and zinc salt solutions bubbled with O2, air, or Ar gas. The interaction of the counteranions with H+ and Pd as well as Zn2+ was suggested as an important factor for the chemical ZnO deposition, and it was found that only NO3- can raise the pH of a DMAB solution without DO, affording the continuous ZnO growth. Dissolved oxygen accelerated the ZnO nucleation process on the Pd and had less influence comparable to NO3- on the subsequent growth on the ZnO surface. The ZnO films deposited from Zn(NO3)2–DMAB solutions bubbled with O2, air, or Ar gas were characterized with an X-ray diffractometer, field emission scanning electron microscope, UV-visible spectrophotometer, and Hall coefficient analyzer. The Ar-bubbled solution gave superior ZnO films in terms of crystallinity, growth orientation, surface morphology, and electrical conductivity due to the relatively moderate crystal nucleation compared to in the presence of DO.
収録刊行物
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- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 (5), H320-H326, 2009
Electrochemical Society
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キーワード
- electrical conductivity
- field emission electron microscopy
- Hall effect
- II-VI semiconductors
- liquid phase deposition
- nucleation
- pH
- scanning electron microscopy
- semiconductor growth
- semiconductor thin films
- surface morphology
- ultraviolet spectra
- visible spectra
- wide band gap semiconductors
- X-ray diffraction
- zinc compounds
詳細情報 詳細情報について
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- CRID
- 1050564285610467712
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- NII論文ID
- 120002098817
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- NII書誌ID
- AA00697016
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- ISSN
- 00134651
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- HANDLE
- 2433/109930
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
- CiNii Articles