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Propagation of charged carriers in semiconductor superlattices is analyzed on the basis of the effective mass approximation with appropriate boundary conditions at heterojunctions taken into account. Applying the finite element method, clarified are the effects of details of the potential profile, such as linear and smooth gradings and random fluctuations, on characteristics of superlattices which are expected to work as collector barriers and energy filters in electronic devices.
収録刊行物
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- Memoirs of the Faculty of Engineering, Okayama University
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Memoirs of the Faculty of Engineering, Okayama University 24 (1), 93-105, 1989-11-29
Faculty of Engineering, Okayama University
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詳細情報 詳細情報について
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- CRID
- 1390290699524883712
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- NII論文ID
- 120002307513
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- NII書誌ID
- AA10699856
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- ISSN
- 04750071
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- DOI
- 10.18926/15482
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- IRDB
- CiNii Articles