Preparation and Characterization of Ti(2)O(3) Films Deposited on Sapphire Substrate by Activated Reactive Evaporation Method

• Fujii Tatsuo

• Sakata Naoki

• Nanba Tokuro

• Osaka Akiyoshi

• Miura Yoshinari

• Takada Jun

抄録

(001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions.

収録刊行物

• Memoirs of the Faculty of Engineering, Okayama University

  Memoirs of the Faculty of Engineering, Okayama University 26 (2), 69-75, 1992-03-28

  Faculty of Engineering, Okayama University

詳細情報

• CRID: 1390572174534502400
• NII論文ID: 120002307639
• NII書誌ID: AA10699856
• ISSN: 04750071
• DOI: 10.18926/15436
• Web Site: https://ousar.lib.okayama-u.ac.jp/15436
• 本文言語コード: en
• データソース種別:
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  • IRDB
  • CiNii Articles