A High-powered Optoelectronic Switch with Picosecond Risetime

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Abstract

A switch element has been developed so that a kilovolt step voltage should be supplied to a 50Ω transmission line with a subnanosecond rise time. The element is of silicon substrate with high purity and a pair of electrodes is attached by the evaporation process. The switch action is performed by the photoconductivity produced by the laser light pulse. This paper deals with a preliminary analysis, manufacturing processes and experimental results of theoptoelectronic switch. A performance of 320V output with less than 4 ns risetime was obtained with sufficient persistence for more than 2×10(5) pulse shots. This switch was successfully applied to an optical waveform monitor for laser light pulses giving a resolution less than 2 ns.

Journal

  • Memoirs of the School of Engineering, Okayama University

    Memoirs of the School of Engineering, Okayama University 14(2), 13-22, 1980-03-01

    岡山大学工学部

Codes

  • NII Article ID (NAID)
    120002307887
  • NII NACSIS-CAT ID (NCID)
    AA00733903
  • Text Lang
    ENG
  • Article Type
    departmental bulletin paper
  • ISSN
    0475-0071
  • Data Source
    IR 
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