Vibrational Properties of Si Crystal with Vacancy : A Tight-Binding Study

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Abstract

To analyze vibrational properties of Si crystal with a single charge-neutral vacancy, we perform large-scale simulations based on tight-binding molecular-dynamics method.Vibrational modes and frequencies are obtained by diagonalizing dynamical matrix within a harmonic approximation. Results indicate that there exist vibrational modes spatially localized around the vacancy and large frequency shifts associated with the localizedmodes contribute significantly to reduction of the vibrational free energy.

Journal

  • Memoirs of the Faculty of Engineering, Okayama University

    Memoirs of the Faculty of Engineering, Okayama University 42(1), 44-47, 2008-01

    Faculty of Engineering, Okayama University

Codes

  • NII Article ID (NAID)
    120002308412
  • NII NACSIS-CAT ID (NCID)
    AA10699856
  • Text Lang
    ENG
  • Article Type
    departmental bulletin paper
  • ISSN
    0475-0071
  • Data Source
    IR 
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