Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

• 船戸, 充

• Funato, Mitsuru

• Kawakami, Yoichi

抄録

We investigated the effect of growth parameters for obtaining high-quality AlN grown directly on sapphire substrates by a hybridized method, derived from simultaneous source supply and conventional migration-enhanced epitaxy. At an optimal growth temperature of 1200 °C, AlN was atomically smooth and pit-free, while below and above 1200 °C, AlN was rough and with pits, respectively. Surface morphologies also depended on the V/III ratio. Rough surfaces became atomically smooth but then pits appeared, as the V/III ratio increased. The crystallinity revealed by X-ray diffraction changed accordingly. The 600-nm-thick AlN grown under the optimal conditions showed X-ray line widths of as narrow as not, vert, similar43 and not, vert, similar250 arcsec for (0 0 0 2) and (1 0 1¯ 2) diffractions, respectively.

Proceedings of the "2nd International Symposium on Growth of III Nitrides

収録刊行物

• Journal of Crystal Growth

  Journal of Crystal Growth 311 (10), 2834-2836, 2009-05-01

  Elsevier

キーワード

• A2. Metal-organic vapor-phase epitaxy
• B1. Nitrides
• B1. Semiconducting III–V materials

詳細情報

• CRID: 1050282677041805568
• NII論文ID: 120002317421
• NII書誌ID: AA00696341
• ISSN: 00220248
• HANDLE: 2433/123387
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles