On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates

• 中嶋 一雄

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 85 (8), 1335-1337, 2004

  American Institute of Physics

詳細情報

• CRID: 1571417127588170112
• NII論文ID: 120002337905
• ISSN: 00036951
• Web Site: http://hdl.handle.net/10097/47023
• 本文言語コード: en
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