Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes

IR

Abstract

The electroluminescence (EL) spectral intensity has been investigated in the high-brightness green InGaNmultiple-quantum-well light emitting diode (LED) in comparison with the single-quantum-well LED overa wide temperature range and as a function of injection current. It is found that the EL variation patternwith temperature and current is dramatically improved when the number of active wells increases as a resultof enhanced carrier capture. The importance of vertical carrier capture processes is pointed out to explainthe anomalous EL intensity variations at low temperatures.

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