Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes: a comparative study

• Hori, A

• Yasunaga, D

• Fujiwara, Kenzo

Abstract

Electroluminescence (EL) spectral intensity in the high-brightness blue and green InGaNsingle-quantum-well (SQW) diodes has been comparatively studied over a wide temperature range andas a function of injection current. When the necessary forward bias conditions to get a certain currentlevel are different, it is found that the anomalous EL quenching previously observed below 100 K for theSQW diodes strongly changes and shows a striking difference between the blue and green SQW diodes.This unusual EL evolution pattern is attributed to both internal and external fields, suggesting importanceof the internal piezoelectric field effects on the efficient carrier capture processes by localized tail stateswithin SQW under the presence of high-density misfit dislocations.

Journal Article

Journal

• Thin Solid Films

  Thin Solid Films 515 (10), 4480-4483, 2007-03

  Elsevier

Keywords

• Electroluminescence
• III–V semiconductor
• Quantum well
• Gallium nitrides

Details

• CRID: 1050282813886370304
• NII Article ID: 120002440618
• ISSN: 00406090
• HANDLE: 10228/407
• Web Site: https://kyutech.repo.nii.ac.jp/records/162
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles
  • KAKEN