Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits

• Takashima, Wataru

• Murasaki, Tsutomu

• Nagamatsu, Shuichi

• Morita, Takeomi

• Kaneto, Keiichi

Abstract

Ambipolar organic field effect transistors (OFETs), consisting of a composite of polyhexylthiophene (PHT) and [6,6]-phenyl C61-butylic acid methyl ester (PCBM), was converted into a p- or n-type OFET by insertion of a thin tetracyanoquinodimethane (TCNQ) or tetrathiafluvalene (TTF) buffer layer. The interface in the Au/TCNQ/PHT:PCBM composite transports hole but blocks electron, while the transported carrier was switched to electron with insertion of a TTF layer. The selective transport is probably due to vacuum level matching or temporal doping. High impedance in a complementary metal-oxide-semiconductor inverter was demonstrated with unipolarized ambipolar FETs, resulting in a decrease in the through current.

Journal

• Applied Physics Letters

  Applied Physics Letters 91 (07), 071905-1-071905-3, 2007-08-13

  American Institute of Physics

Details

• CRID: 1050282813886503936
• NII Article ID: 120002441077
• NII Book ID: AA00543431
• ISSN: 10773118
• ISSN: 00036951
• HANDLE: 10228/1256
• Web Site: https://kyutech.repo.nii.ac.jp/records/838
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles