A comparative study of Al and LiF:Al interfaces with poly (3-hexylthiophene) using bias dependent photoluminescence technique

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Abstract

The qualitative nature of the interface of poly (3-hexylthiophene) (P3HT) with Aluminum (previous termAl) and LiFnext term modified Aluminum (previous termLiF:Al)next term has been studied using photoluminescence (PL) spectra. It was observed that coating previous termAlnext term on pristine P3HT film resulted in an increase in the degree of intrachain disorder. Also, previous termanext term blue shift in the peak PL intensity was observed. These observations have been explained on the basis of intrachain disorder induced by the deposition of previous termAlnext term via thermal evaporation on P3HT film. Furthermore, bias dependence of PL spectra for ITO/P3HT/previous termAlnext term and ITO/P3HT/previous termLiF:Alnext term type Schottky cells were studied. Under the reverse bias conditions, PL quenching was found to relate directly to the depletion layer width. The increase in depletion width was found to be higher in the previous termAlnext term cell as compared to that of the previous termLiF:Alnext term cell. However, the photocurrents were higher in previous termLiF:Alnext term coated cells. These observed results have been explained on the basis of the difference in their respective band alignment.

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