All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation

• 石井, 良太

• Kaneta, Akio

• Funato, Mitsuru

• Kawakami, Yoichi

抄録

Reflectance spectroscopy was performed for nonpolar and semipolar bulk GaN substrates under uniaxial stress. The exciton-transition energies and oscillator strengths clearly depended on uniaxial stress. The results were interpreted by group theory on excitons and analyzed in terms of the effective Hamiltonian proposed by Bir and Pikus. In the Hamiltonian, the short-range Coulomb interaction was taken into consideration. This approach allows all exciton deformation potentials to be determined without the quasicubic approximation and we found that the exciton deformation potentials in GaN considerably deviate from the quasicubic approximation.

収録刊行物

• Physical Review B

  Physical Review B 81 (15), 2010-04

  American Physical Society

詳細情報

• CRID: 1050282676671369984
• NII論文ID: 120002511392
• NII書誌ID: AA11187113
• ISSN: 10980121
• HANDLE: 2433/128922
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles