Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors

• Wang, Wei

• 土屋, 英昭

• Ogawa, Matsuto

収録刊行物

• JOURNAL OF APPLIED PHYSICS

  JOURNAL OF APPLIED PHYSICS 106 (2), 024515-024515, 2009-07-31

  American Institute of Physics (AIP)

詳細情報

• CRID: 1050294045371523840
• NII論文ID: 120002753081
• ISSN: 10897550
• ISSN: 00218979
• HANDLE: 20.500.14094/90001275
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles