GaInAsP/InP quantum wire lasers
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Abstract
金沢大学理工研究域電子情報学系
Present status of GaInAsP/InP long-wavelength quantum wire lasers, fabricated by a method using electron beam exposure, dry etching, and two-step organometallic vapor-phase epitaxy, is described from aspects of low-damage interface formation and size uniformity of quantum wire structures. Even though superior lasing properties attributed to sharper gain spectrum over that of quantum well structure have not been realized yet, polarization anisotropic feature of the quantum wire structure and formation of good interfaces by this fabrication method were confirmed. Single-wavelength lasers consisting of quantum wire structure as the active and/or the passive regions have been realized as possible candidates for future integrated photonics. © 2006 IEEE.
Journal
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- IEEE Journal on Selected Topics in Quantum Electronics
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IEEE Journal on Selected Topics in Quantum Electronics 15 (3), 731-742, 2009-05-01
IEEE = Institute of Electrical and Electronics Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1050001335936600576
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- NII Article ID
- 120002829209
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- NII Book ID
- AA11036333
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- ISSN
- 1077260X
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- Web Site
- http://hdl.handle.net/2297/19579
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- CiNii Articles