Uniformity of gallium doped zinc oxide thin film prepared by pulsed laser deposition

• Mitsugi, Fumiaki

• Umeda, Yoshihiro

• Sakai, Norihiro

• Ikegami, Tomoaki

• 光木, 文秋

• 梅田, 佳宏

• 坂井, 徳浩

• 池上, 知顯

抄録

type:論文(Article)

Recently, transparent conducting oxide thin films have attracted attention for the application to transparent conducting electrodes. In this work, we evaluated the uniformity of electrical, optical and structural properties for gallium doped zinc oxide thin films prepared on the 10 × 10 cm2 silica glass substrate by pulsed laser deposition. The resistivity, carrier concentration, mobility, bonding state and atomic composition of the film were uniform along in-plane and depth direction over the 10 × 10 cm2 area of the substrate. The film showed the average transmittance of 81-87%, resistivity of 1.4 × 10- 3 Ω cm, carrier concentration of 9.7 × 1020/cm3 and mobility of 5 cm2/Vs in spite of the amorphous X-ray diffraction pattern. The gradual thickness distribution was found, however, the potential for large-area and low temperature deposition of transparent conducting oxide thin film using pulsed laser deposition method was confirmed.

source:00406090

identifier:http://www.sciencedirect.com/science/article/pii/S0040609010003445

収録刊行物

• Thin Solid Films

  Thin Solid Films 518 (22), 6334-6338, 2010-09-01

  Elsevier

キーワード

• Transparent conducting oxide
• Amorphous gallium doped zinc oxide
• Pulsed laser deposition
• Room temperature deposition
• Large-area deposition
• 541

詳細情報

• CRID: 1050001337928657536
• NII論文ID: 120003142180
• Web Site: http://hdl.handle.net/2298/19898
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
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  • CiNii Articles
  • KAKEN