Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

• Banal, Ryan G.

• Funato, Mitsuru

• Kawakami, Yoichi

抄録

Internal quantum efficiencies (IQEs) as high as 69% were realized at room temperature from AlGaN/AlN quantum wells (QWs) emitting at 247 nm grown by metalorganic vapor phase epitaxy. The extremely high IQEs were achieved by examining the source–supply sequence. QWs fabricated by a continuous source–supply method have longer emission wavelengths (λ) and higher IQEs compared to QWs fabricated by modified migration enhanced epitaxy (MMEE). MMEE is an alternating source–supply method where the NH3 interruption promotes Ga evaporation. Thus, to obtain the same λ, MMEE requires a lower growth temperature than the continuous method, compromising the quality of the AlN and AlGaN layers as well as the IQE of QWs.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 99 (1), 2011-07

  American Institute of Physics

キーワード

• aluminium compounds
• gallium compounds
• III-V semiconductors
• semiconductor quantum wells
• vapour phase epitaxial growth
• wide band gap semiconductors

詳細情報

• CRID: 1050845760650942080
• NII論文ID: 120003290283
• NII書誌ID: AA00543431
• ISSN: 00036951
• HANDLE: 2433/145218
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles