Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

• Pei, Yanli

• Yin, Chengkuan

• Kojima, Toshiya

• Nishijima, Masahiko

• Fukushima, Takafumi

• Tanaka, Tetsu

• Koyanagi, Mitsumasa

抄録

学術論文 (Article)

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 95 (3), 033118-, 2008

  American Institute of Physics

詳細情報

• CRID: 1050001202732949760
• NII論文ID: 120003728303
• ISSN: 00036951
• HANDLE: 10097/51827
• Web Site: https://tohoku.repo.nii.ac.jp/records/53667
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles