Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate

• Kim, Hyo Jin

• Mothohisa, Junichi

• Fukui, Takashi

抄録

The optical properties of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO2-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In0.8Ga0.2As SAQDs grown on SiO2-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) GaAs substrates as the width of the opening windows increased. The power-dependent μ-PL spectra show that the first and second peaks of these double peaks were originated from the well-defined ground and excited state, respectively. These results demonstrated that In0.8Ga0.2As SAQDs selectively grown by utilizing SiO2-patterned 5°-off (001) GaAs substrates have well-defined zero-dimensional quantum states.

収録刊行物

• Nanoscale Research Letters

  Nanoscale Research Letters 7 104-, 2012-02-06

  Springer

キーワード

• Condensed Matter Physics
• General Materials Science

詳細情報

• CRID: 1050001339010712192
• NII論文ID: 120003994107
• DOI: 10.1186/1556-276x-7-104
• ISSN: 1556276X
• ISSN: 19317573
• HANDLE: 2115/49093
• Web Site: http://link.springer.com/content/pdf/10.1186/1556-276X-7-104.pdf
• Web Site: http://link.springer.com/article/10.1186/1556-276X-7-104/fulltext.html
• 本文言語コード: en
• 資料種別: journal article
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