The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics

• Kaiju, Hideo

• Kondo, Kenji

• Ono, Akito

• Kawaguchi, Nobuyoshi

• Won, Jonghan

• Hirata, Akihiko

• Ishimaru, Manabu

• Hirotsu, Yoshihiko

• Ishibashi, Akira

抄録

Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate (PEN) substrates with their edges crossing have been fabricated and its current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was made without the use of electron-beam or optical lithography, is as small as 17 nm x 17 nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of modified Anderson model. The calculated results also predict a high switching ratio in excess of 100000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.

収録刊行物

• Nanotechnology

  Nanotechnology 21 (1), 015301-, 2010-01-08

  IOP Publishing

詳細情報

• CRID: 1050001202675011968
• NII論文ID: 120004123454
• HANDLE: 2115/49333
• ISSN: 09574484
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles