Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn+ ions

• Dang, Giang T.

• Kawaharamura, Toshiyuki

• Nitta, Noriko

• Hirao, Takashi

• Yoshiie, Toshimasa

• Taniwaki, Masafumi

抄録

Hydrothermal ZnO wafers implanted at room temperature with 60 keV Sn^+ ions are examined by means of photoluminescence (PL), atomic force spectroscopy (AFM), and X-ray diffractometry techniques. The PL intensity significantly decreases in the wafers implanted to doses of 4.1 × 10^[13] ions/cm^2 and higher. The AFM measurements indicate that surface roughness variation is not the cause of the significant decrease in PL intensity. Furthermore, the PL deep level (DL) band peak blueshifts after illuminating the implanted samples with the He-Cd laser 325 nm line; meanwhile, the DL band intensity first increases and then decreases with illumination time. These abnormal behaviors of the DL band are discussed.

収録刊行物

• JOURNAL OF APPLIED PHYSICS

  JOURNAL OF APPLIED PHYSICS 109 (12), 2011-06

  American Institute of Physics

キーワード

• atomic force microscopy
• crystal growth from solution
• II-VI semiconductors
• ion implantation
• photoluminescence
• spectral line shift
• surface morphology
• surface roughness
• tin
• wide band gap semiconductors
• X-ray diffraction
• zinc compounds

詳細情報

• CRID: 1050564285693316992
• NII論文ID: 120004920368
• NII書誌ID: AA00693547
• ISSN: 00218979
• HANDLE: 2433/160650
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles