Solvent Effects on the Transient Characteristics of Liquid-Gate Field Effect Transistors with Silicon Substrate
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抄録
The transient characteristics of electric double layer (EDL) gated field-effect transistors with Si as an active semiconductor were studied using various electrolyte solutions of LiBF4 by applying a step-function voltage to determine the optimum electrolyte for semiconductor circuits using EDLs. The tR, determined by EDL dynamics in the present experiment, was minimum as a function of the kind of solvent used owing to the competing effects of the EDL thickness and viscosity. The responses of the electrolyte solutions with various solvents at the same concentration were classified into three categories on the basis of tR: slow response of a complex-forming solvent, intermediate response of protic solvents, and fast response of nonprotic solvents. The best response time was 55 µs when a 1.0 M acetonitrile solution was used as the liquid-gate insulator.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 51 111803-, 2012-11
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1050001339013214464
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- NII論文ID
- 40019496014
- 120005208962
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- NII書誌ID
- AA12295836
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- ISSN
- 13474065
- 00214922
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- HANDLE
- 2115/51905
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- NDL書誌ID
- 024102825
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
- NDL
- CiNii Articles