Huge electron-hole exchange interaction in aluminum nitride

• 石井, 良太

• Funato, Mitsuru

• Kawakami, Yoichi

抄録

Optical spectroscopy is performed for c-plane homoepitaxial aluminum nitride (AlN) films. The temperature dependence of the polarization-resolved photoluminescence spectra reveals the exciton fine structure. The experimental results demonstrate that the electron-hole exchange interaction energy (j) in AlN is j=6.8 meV, which is the largest value for typical III-V and II-VI compound semiconductors. We propose the effective interatomic distance as the criterion of the electron-hole exchange interaction energy, revealing a universal rule. This study should encourage potential applications of excitonic optoelectronic devices in nitride semiconductors similar to those using II-VI compound semiconductors.

収録刊行物

• Physical Review B

  Physical Review B 87 (16), 2013-04

  American Physical Society

詳細情報

• CRID: 1050282810746489728
• NII論文ID: 120005244911
• NII書誌ID: AA11187113
• ISSN: 10980121
• HANDLE: 2433/174057
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
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  • CiNii Articles