Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN

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Abstract

The Al2O3/InAlN interface formed by atomic layer deposition on a sufficiently thick silicon-doped InAlN layer lattice matched to GaN was investigated electrically. A metal-oxide-semiconductor (MOS) diode fabricated through careful interface formation showed a minimized leakage current and a capacitance-voltage (C-V) characteristic with a capacitance change large enough to evaluate the interface-state density, in the range of 10(12) eV(-1) cm(-2), near the conduction band. However, the MOS diode with careless interface formation resulted in degraded electrical characteristics, which indicated the process dependence of the interface properties. The effects of the acceptor-like interface states on the C-V curves are discussed. (C) 2013 AIP Publishing LLC.

Journal

  • Applied Physics Letters

    Applied Physics Letters 102 (23), 231605-1-231605-3, 2013-06-10

    American Institute of Physics

Details 詳細情報について

  • CRID
    1050001339014409344
  • NII Article ID
    120005315201
  • HANDLE
    2115/53072
  • ISSN
    00036951
  • Text Lang
    en
  • Article Type
    journal article
  • Data Source
    • IRDB
    • CiNii Articles

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