Hydrogen-Related Dangling Bonds in Hydrogenated Amorphous Silicon

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Abstract

We review the results of deconvolution of the dangling-bond ESR spectra into two components due to normal dangling bonds and hydrogen-related dangling bonds in a-Si:H. The relationship between isotropic and anisotropic hyperfine interaction constants of the dangling-bond electron at the hydrogen-related dangling bond with a hydrogen nucleus at a nearby site is examined for various types of a-Si:H samples, including ESR data taken from the literatures. The distance between a dangling-bond site and hydrogen estimated from anisotropic hyperfine interaction constant is also surveyed for these samples.

Journal

  • 広島工業大学研究紀要

    広島工業大学研究紀要 33, 135-142, 36192-00-00

    広島工業大学

Codes

  • NII Article ID (NAID)
    120005403262
  • NII NACSIS-CAT ID (NCID)
    AN0021271X
  • Text Lang
    ENG
  • Article Type
    Departmental Bulletin Paper
  • ISSN
    3851672
  • Data Source
    IR 
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