Hydrogen-Related Dangling Bonds in Hydrogenated Amorphous Silicon
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We review the results of deconvolution of the dangling-bond ESR spectra into two components due to normal dangling bonds and hydrogen-related dangling bonds in a-Si:H. The relationship between isotropic and anisotropic hyperfine interaction constants of the dangling-bond electron at the hydrogen-related dangling bond with a hydrogen nucleus at a nearby site is examined for various types of a-Si:H samples, including ESR data taken from the literatures. The distance between a dangling-bond site and hydrogen estimated from anisotropic hyperfine interaction constant is also surveyed for these samples.
広島工業大学研究紀要 33, 135-142, 36192-00-00