Hydrogen-Related Dangling Bonds in Hydrogenated Amorphous Silicon

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抄録

We review the results of deconvolution of the dangling-bond ESR spectra into two components due to normal dangling bonds and hydrogen-related dangling bonds in a-Si:H. The relationship between isotropic and anisotropic hyperfine interaction constants of the dangling-bond electron at the hydrogen-related dangling bond with a hydrogen nucleus at a nearby site is examined for various types of a-Si:H samples, including ESR data taken from the literatures. The distance between a dangling-bond site and hydrogen estimated from anisotropic hyperfine interaction constant is also surveyed for these samples.

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  • 広島工業大学研究紀要

    広島工業大学研究紀要 33, 135-142, 36192-00-00

    広島工業大学

各種コード

  • NII論文ID(NAID)
    120005403262
  • NII書誌ID(NCID)
    AN0021271X
  • 本文言語コード
    ENG
  • 資料種別
    Departmental Bulletin Paper
  • ISSN
    3851672
  • データ提供元
    IR 
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