Hydrogen-Related Dangling Bonds in Hydrogenated Amorphous Silicon

• 森垣 和夫

• 疋田 春水

抄録

We review the results of deconvolution of the dangling-bond ESR spectra into two components due to normal dangling bonds and hydrogen-related dangling bonds in a-Si:H. The relationship between isotropic and anisotropic hyperfine interaction constants of the dangling-bond electron at the hydrogen-related dangling bond with a hydrogen nucleus at a nearby site is examined for various types of a-Si:H samples, including ESR data taken from the literatures. The distance between a dangling-bond site and hydrogen estimated from anisotropic hyperfine interaction constant is also surveyed for these samples.

収録刊行物

• 広島工業大学研究紀要

  広島工業大学研究紀要 (33), 135-142,

  広島工業大学

詳細情報

• CRID: 1571980077562973568
• NII論文ID: 120005403262
• NII書誌ID: AN0021271X
• Web Site: http://harp.lib.hiroshima-u.ac.jp/it-hiroshima/metadata/7168
• 本文言語コード: en
• データソース種別:
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