Microwave Power Dependence of Deconvolution of Dangling Bond ESR Spectra in a-Si:H

この論文をさがす

抄録

Deconvolution of the dangling-bond ESR spectra of a-Si:H into two components due to normal dangling bonds and hydrogen-related dangling bonds was done as a function of microwave power. Relative intensities due to two types of dangling bonds were measured as functions of microwave power. It was found that ESR of normal dangling bonds is more easily saturated than that of hydrogen-related dangling bonds. This result is consistent with expectation that hyperfine interaction of an unpaired electron at the hydrogen-related dangling bond with a hydrogen nucleus at a nearby site enhances its spin-lattice relaxation rate compared to the normal dangling bonds.

収録刊行物

詳細情報 詳細情報について

問題の指摘

ページトップへ