Model of the Light-Induced Defect Creation in Hydrogenated Amorphous Silicon

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Abstract

A previous model that prolonged illumination creates two types of dangling bonds, i.e., normal dangling bonds and hydrogen-related dangling bonds (dangling bonds having hydrogen at a nearby site) is modified by taking into account recent observations in a-Si:H, particularly on diffusion of hydrogen dissociated from a Si-H bond by nonradiative recombination at hydrogenrelated dangling bonds and intradistance within a close pair of two types of dangling bonds.

Journal

  • 広島工業大学研究紀要

    広島工業大学研究紀要 33, 19-24, 36192-00-00

    広島工業大学

Codes

  • NII Article ID (NAID)
    120005403301
  • NII NACSIS-CAT ID (NCID)
    AN0021271X
  • Text Lang
    ENG
  • Article Type
    Departmental Bulletin Paper
  • ISSN
    3851672
  • Data Source
    IR 
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