In-Plane Orientation Control of 2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene Monolayer on Bismuth-Terminated Si(111) Vicinal Surfaces with Wettability Optimization

• Ohtomo, Manabu

• Tsuchida, Yuya

• Muraya, Naoki

• Yanase, Takashi

• Sakai, Seiji

• Yonezawa, Tetsu

• Nagahama, Taro

• Hasegawa, Tetsuya

• Shimada, Toshihiro

抄録

We report the in-plane orientation control of a high-mobility organic semiconductor: 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT). As previously reported for the monolayer pentacene, it was revealed that bunched steps on the vicinal Si(111) with a bismuth termination break the surface 3-fold symmetry and reduce the multiple orientation of the DPh-BTBT grains into a quasi-single orientation. Interestingly, the critical step height necessary for the orientation control was higher than that of pentacene. We examined several mechanisms of orientation control and concluded that the facet nanostructure fabricated by step bunching works as an anisotropic template for the nucleation. We also show the wettability optimization of the bismuth-terminated silicon surface and show that the growth mode of DPh-BTBT is dependent on the surface nanostructure of Bi–Si.

収録刊行物

• The Journal of Physical Chemistry C

  The Journal of Physical Chemistry C 117 (22), 11555-11561, 2013-06-06

  American Chemical Society

詳細情報

• CRID: 1050001339014422656
• NII論文ID: 120005438223
• NII書誌ID: AA1217589X
• ISSN: 19327455
• ISSN: 19327447
• HANDLE: 2115/56245
• 本文言語コード: en
• 資料種別: journal article
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