Theoretical modeling of spin quantum cross structure devices with noncollinear ferromagnetic electrodes

• Kondo, Kenji

抄録

Recently, we have proposed a spin quantum cross structure (SQCS) device toward the realization of novel switching devices. The SQCS device consists of two ferromagneticmetalthin films with their edges facing each other at an angle of θ, and sandwiches a few molecules and atoms. In this paper, the calculation of electronic transport has been performed for SQCS devices with the Ni noncollinear magnetic films as both electrodes within the framework of the Anderson Hamiltonian, taking into consideration both polar angle θ, and azimuthal angle ϕ. We have obtained the general noncollinear spin transport formula, and the polar angle dependence of current-voltage characteristics of SQCS devices. The noncollinear spin transport is determined only by the angle θ defined by the inner product of two spins. Also, it is implied that SQCS devices can serve as multivalued memory devices by varying the angle θ.

収録刊行物

• Journal of applied physics

  Journal of applied physics 107 (9), 09-09, 2010-05-01

  American Institute of Physics

詳細情報

• CRID: 1050001202676468352
• NII論文ID: 120005476084
• NII書誌ID: AA00693547
• ISSN: 10897550
• ISSN: 00218979
• HANDLE: 2115/56990
• 本文言語コード: en
• 資料種別: journal article
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