Slow intraband relaxation and localization of photogenerated carriers in CuIn{1−x}Ga{x}Se{2} thin films: Evidence for the existence of long-lived high-energy carriers

• 岡野, 真人

• Takabayashi, Yutaro

• Sakurai, Takeaki

• Akimoto, Katsuhiro

• Shibata, Hajime

• Niki, Shigeru

• 金光, 義彦

抄録

The dynamics of free carriers in polycrystalline CuIn{1−x}Ga{x}Se{2} (CIGS) thin films were studied using picosecond time-resolved photoluminescence (PL) and femtosecond transient-absorption (TA) measurements. The PL spectrum and the TA decay component due to the band-to-band recombination of free carriers were observed in the picosecond time region. From excitation-photon-energy-dependent TA measurements, we identified a slow intraband relaxation of free carriers in the CIGS thin films. Collectively, the combination of PL and TA experiments reveal a global feature of energy relaxation and recombination processes of free carriers in the femtosecond to nanosecond time regions.

収録刊行物

• Physical Review B

  Physical Review B 89 (19), 2014-05-20

  American Physical Society

詳細情報

• CRID: 1050001335796975872
• NII論文ID: 120005477677
• NII書誌ID: AA11187113
• ISSN: 10980121
• HANDLE: 2433/191007
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles