Clustering of germanium atoms in silica glass responsible for the 3.1 eV emission band studied by optical absorption and X-ray absorption fine structure analysis

• Yoshida, Tomoko

• Muto, Shunsuke

• Yuliati, Leny

• Yoshida, Hisao

• Inada, Yasuhiro

Abstract

Correlation between the 3.1 eV emission band and local atomic configuration was systematically examined for Ge+ implanted silica glass by UV–vis optical absorption spectroscopy and X-ray absorption fine structure (XAFS) analysis. The 2.7 eV emission band, commonly observed in defective silica, was replaced by the sharp and intense 3.1 eV emission band for the Ge+ fluence > 2 × 1016 cm−2, in which UV–vis absorption spectra suggested clustering of Ge atoms with the size ∼1 nm. XAFS spectroscopy indicated that the Ge atoms were under coordinated with oxygen atoms nearly at a neutral valence state on average. The present results are consistent with the previous ESR study but imply that the small Ge clusters rather than the O=Ge: complexes (point defects) are responsible for the 3.1 eV emission band.

Journal

• Journal of Nuclear Materials

  Journal of Nuclear Materials 386–388 1010-1013, 2009-04

  Elsevier

Details

• CRID: 1050282813780158976
• NII Article ID: 120005496488
• HANDLE: 2237/20786
• ISSN: 00223115
• Web Site: https://nagoya.repo.nii.ac.jp/records/18691
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • CiNii Articles