Origins of lasing emission in a resonance-controlled ZnO random laser

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We investigate the origins of lasing emission in a scatterer-resonance-controlled random laser made of ZnO nanopowder over a wide temperature range (20–300 K). At higher temperatures (>150 K), the lasing emission appears around exciton recombination energies and the lasing threshold carrier density is comparable to the Mott density, indicating that the resonance-controlled random laser is going toward showing excitonic lasing; at lower temperatures, random lasing is caused by usual electron–hole plasma recombination because of the threshold carrier density being much larger than the Mott density.

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詳細情報 詳細情報について

  • CRID
    1050282813993677952
  • NII論文ID
    120005600750
  • HANDLE
    2115/58541
  • ISSN
    13672630
  • 本文言語コード
    en
  • 資料種別
    journal article
  • データソース種別
    • IRDB
    • CiNii Articles

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