Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(100)

• Lebedev, Mikhail V.

• Ikeda, Katsuyoshi

• Noguchi, Hidenori

• Abe, Yusuke

• Uosaki, Kohei

抄録

The ultrafast carrier dynamics of GaAs(1 0 0) surfaces passivated with different sulfide solutions is studied by time-resolved measurements of infrared absorption using the femtosecond visible-pump infrared-probe technique. After passivation of n-GaAs(1 0 0) surface with the solution of ammonium sulfide in 2-propanol the three-fold decrease of the surface recombination velocity is observed. The treatment of the n-GaAs(1 0 0) surface with the aqueous sulfide solution has a smaller impact on the surface recombination velocity. The different effect of aqueous and alcoholic sulfide solutions on the efficiency of surface passivation is caused by the different mechanisms of charge transfer at the semiconductor/solution interfaces.

収録刊行物

• Applied Surface Science

  Applied Surface Science 267 185-188, 2013-02-15

  Elsevier

キーワード

• GaAs
• Sulfur passivation
• Surface recombination
• Semiconductor/solution interface
• Ammonium sulfide
• Solvent effect

詳細情報

• CRID: 1050001339019209472
• NII論文ID: 120005647273
• HANDLE: 2115/59734
• ISSN: 01694332
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles