Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps

• 奥村, 宏典

• Kimoto, Tsunenobu

• Suda, Jun

抄録

We grew AlN layers on 6H-SiC (0001) substrates with three Si-C bilayer high (0.75 nm) steps. In the AlN layers, most of the threading dislocations (TDs) were arranged in rows. The TD row consisted of arrays of a half-loop dislocation, which was formed by an AlN/SiC interfacial dislocation along the step edges of the SiC substrate surfaces and a TD pair at both ends. The configuration of the interfacial dislocation was highly relevant with two-dimensional AlN nuclei at the initial stage of growth. We concluded that the half-loop dislocation arrays were generated in the AlN nucleus coalescence over the SiC step edges.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 105 (7), 2014-08-18

  AIP Publishing

詳細情報

• CRID: 1050282810793019008
• NII論文ID: 120005669315
• NII書誌ID: AA00543431
• ISSN: 00036951
• HANDLE: 2433/201403
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles