Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

• Fujisawa, Takeshi

• Saitoh, Kunimasa

抄録

Quantum-confined Stark effect (QCSE) of group IV Ge(Sn)/SiGe(Sn) quantum wells (QWs) on Si substrate is analyzed by microscopic many-body theory for mid-infrared (mid-IR) Si-based electroabsorption devices. To show the validity of the theory, QCSE of Ge/SiGe QW is investigated and very good agreement between theory and reported measured results is obtained. Next, the QCSE of GeSn/SiGeSn QWs is analyzed and the QW design for electroabsorption modulators to obtain large extinction ratio in mid-IR region is presented. It is shown that compressive and tensile strained well and barrier layers is preferable to obtain large extinction ratio due to its large conduction band offset.

収録刊行物

• IEEE journal of quantum electronics

  IEEE journal of quantum electronics 51 (11), 8400207-, 2015-11

  IEEE

キーワード

• Si photonics
• GeSn quantum wells
• electroabsorption modulators
• quantum-confined Stark effect
• and many-body theory

詳細情報

• CRID: 1050282813996038144
• NII論文ID: 120005677756
• HANDLE: 2115/60344
• ISSN: 00189197
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
  • IRDB
  • CiNii Articles