High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

• Fujii, Mami N.

• Ishikawa, Yasuaki

• Miwa, Kazumoto

• Okada, Hiromi

• Uraoka, Yukiharu

• Ono, Shimpei

抄録

The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

収録刊行物

• Scientific Reports

  Scientific Reports 5 2015-12-18

  Macmillan Publishers

キーワード

• Multidisciplinary

詳細情報

• CRID: 1050295834376011008
• NII論文ID: 120005716880
• NII書誌ID: AA10703873
• ISSN: 20452322
• DOI: 10.1038/srep18168
• HANDLE: 10061/10464
• Web Site: https://naist.repo.nii.ac.jp/records/9698
• Web Site: https://www.nature.com/articles/srep18168
• Web Site: https://www.nature.com/articles/srep18168.pdf
• 本文言語コード: en
• 資料種別: journal article
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