High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
Search this article
Abstract
The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.
Journal
-
- Scientific Reports
-
Scientific Reports 5 2015-12-18
Macmillan Publishers
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1050295834376011008
-
- NII Article ID
- 120005716880
-
- NII Book ID
- AA10703873
-
- ISSN
- 20452322
-
- HANDLE
- 10061/10464
-
- Text Lang
- en
-
- Article Type
- journal article
-
- Data Source
-
- IRDB
- Crossref
- CiNii Articles
- KAKEN